Epitaxial Technique and Equipment for Wafer

Epitaxial Technique and Equipment for Wafer

Sapphire wafer is widely used as a substrate in epitaxy.

Here is the epitaxial technique and equipment used during that process:

MOCVD: Metal-Organic Chemical Vapor Deposition

APCVD: Atmospheric Pressure Chemical Vapor Deposition

RPCVD: Reduced Pressure Chemical Vapor Deposition

LPCVD: Low-Pressure Chemical Vapor Deposition

UHCVD: Ultra-high vacuum Chemical Vapor Deposition

LCVD: Laser-induced Chemical Vapor Deposition

PECVD / PACVD: Plasma Enhanced (Assisted) Chemical Vapor Deposition

RF-MBE: Radio Frequency-Molecular Beam Epitaxy

PA-MBE: Plasma Assisted-Molecular Beam Epitaxy

HVPE: Hydride Vapor Phase Epitaxy

VPE: Vapor Phase Epitaxy

LPE: Liquid Phase Epitaxy

SPE: Solid Phase Epitaxy

CME: Chemical beam epitaxy

ALD / ALE: Atomic Layer Deposition /Atomic Layer Epitaxy

IBAD: Iron Beam Assisted Deposition

PLD: Pulsed Laser Deposition

RF magnetron sputtering

Arc plasma coating

EBE: Electron Beam Evaporation


1. Physical deposition process

2. The ultrahigh vacuum coating technique

3. Atomic layer precision thickness control, suitable for ultra-thin superlattice materials

4. Growth of high purity epitaxial layers with high uniformity


1. Wide range of application: the growth of almost all compounds and alloy semiconductors

2. Precise control of crystal growth; Good repeatability; suitable for industrial production


1. Growth of II-V Nitride compound semiconductor thin film, superlattice materials.

2. Disadvantage: High deposition rate, poor lattice quality


1. Low temperature: save the cost, increase production capacity

2. Fast deposition speed

3. Good lattice quality

4. Disadvantage: High cost (expensive equipment), strict requirements on gas purity

CRYSCORE is a professional sapphire wafer supplier, contact us to get more info.

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