N-plane sapphire wafers are not as common as C-plane (0001), A-plane (11-20) or R-plane (1-102) wafers. Research shows that for AlN grown on A-plane(11-20) sapphire, the N-plane(11-23) epitaxial relationship between AlN and sapphire changed with nitridation temperature in the initial stage of growth, but it remained constant for AlN grown on N-plane sapphire.
Other films, such as ZnTe epilayers can be grown on N-plane (11-23) sapphire wafers by molecular beam epitaxy.
|Item||2-inch N-plane(11-23) 430μm Sapphire Wafers|
|Crystal Materials||99,999%, High Purity, Monocrystalline Al2O3|
|Diameter||50.8 mm +/- 0.1 mm|
|Thickness||430 μm +/- 25 μm|
|Primary Flat Orientation||A-plane(11-20) +/- 0.2°|
|Primary Flat Length||16.0 mm +/- 1.0 mm|
|Single Side Polished||Front Surface||Epi-polished, Ra < 0.5 nm (by AFM)|
|(SSP)||Back Surface||Fine ground, Ra = 0.8 μm to 1.2 μm|
|Double Side Polished||Front Surface||Epi-polished, Ra < 0.5 nm (by AFM)|
|(DSP)||Back Surface||Epi-polished, Ra < 0.5 nm (by AFM)|
|TTV||< 10 μm|
|BOW||< 10 μm|
|WARP||< 10 μm|
|Cleaning / Packaging||Class 100 cleanroom cleaning and vacuum packaging,|
|25 pieces in one cassette packaging or single piece packaging.|
Note: Custom sapphire substrates and wafers with any orientation and any thickness can be provided.