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N-Plane (11-23) Sapphire Wafers

N-Plane (11-23) Sapphire Wafers

N-plane sapphire wafers are not as common as C-plane (0001), A-plane (11-20) or R-plane (1-102) wafers. Research shows that for AlN grown on A-plane(11-20) sapphire, the N-plane(11-23) epitaxial relationship between AlN and sapphire changed with nitridation temperature in the initial stage of growth, but it remained constant for AlN grown on N-plane sapphire.

Other films, such as ZnTe epilayers can be grown on N-plane (11-23) sapphire wafers by molecular beam epitaxy.

N-Plane (11-23) Sapphire Wafers N-Plane Sapphire Wafers
Specifications of N-Plane (11-23) Sapphire Wafers
Item2-inch N-plane(11-23) 430μm Sapphire Wafers
Crystal Materials99,999%, High Purity, Monocrystalline Al2O3
GradePrime, Epi-Ready
Surface OrientationN-plane(11-23)
Diameter50.8 mm +/- 0.1 mm
Thickness430 μm +/- 25 μm
Primary Flat OrientationA-plane(11-20) +/- 0.2°
Primary Flat Length16.0 mm +/- 1.0 mm
Single Side PolishedFront SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
(SSP)Back SurfaceFine ground, Ra = 0.8 μm to 1.2 μm
Double Side PolishedFront SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
(DSP)Back SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
TTV< 10 μm
BOW< 10 μm
WARP< 10 μm
Cleaning / PackagingClass 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.

Note: Custom sapphire substrates and wafers with any orientation and any thickness can be provided.

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