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R-Plane (1-102) Sapphire Wafers

R-Plane (1-102) Sapphire Wafers

R plane(1-102) sapphire wafers are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications. R plane is the non-polar plane of sapphire. So the different positions of R-plane in sapphire devices, the mechanical, thermal, electrical and optical properties of sapphire devices will vary greatly, which will also affect the subsequent processing performance, processing efficiency and processing yield of sapphire devices.

In order to make the crystal structure of sapphire ingot and subsequent sapphire products consistent, the more common method is to process an A-direction surface on the sapphire ingot as the flat orientation of sapphire wafer (subsequent sapphire products), so that the R-direction position of sapphire ingot and the wafer is consistent.

R-Plane (1-102) Sapphire Wafers R-Plane (1-102) Sapphire Wafers
Specifications of R-Plane (1-102) Sapphire Wafers
Item2 -inch R-plane(1-102) 430μm Sapphire Wafers
Crystal Materials99,999%, High Purity, Monocrystalline Al2O3
GradePrime, Epi-Ready
Surface OrientationR-plane(1-102)
Diameter50.8 mm +/- 0.1 mm
Thickness430 μm +/- 25 μm
Primary Flat Orientation45 +/- 1deg. counter-clockwise from C-axis projection on R-plane
Primary Flat Length16.0 mm +/- 1.0 mm
Single Side PolishedFront SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
(SSP)Back SurfaceFine ground, Ra = 0.8 μm to 1.2 μm
Double Side PolishedFront SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
(DSP)Back SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
TTV< 10 μm
BOW< 10 μm
WARP< 10 μm
Cleaning / PackagingClass 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.

Note: Custom sapphire wafers with any orientation and any thickness can be provided.

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