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A-Plane (11-20) Sapphire Wafers

A-Plane (11-20) Sapphire Wafers

A plane(11-20) sapphire wafers have a uniform dielectric constant and highly insulating characteristic, so they are generally used for hybrid microelectronic applications. This orientation can also be used for the growth of high superconductors.

For example, TlBaCaCuO (TbBaCaCuO), Tl-2212, the hetero-epitaxial superconducting thin film is grown on a sapphire cerium oxide (CeO2) composite substrate. The availability of Angstrom level surface finishes allows for fine line interconnects of hybrid modules.

A-Plane (11-20) Sapphire Wafers A-Plane (11-20) Sapphire Wafers
Specifications of A-Plane (11-20) Sapphire Wafers
Item2-inch A-plane(11-20) 430μm Sapphire Wafers
Crystal Materials99,999%, High Purity, Monocrystalline Al2O3
GradePrime, Epi-Ready
Surface OrientationA-plane(11-20)
Diameter50.8 mm +/- 0.1 mm
Thickness430 μm +/- 25 μm
Primary Flat OrientationC-plane(0001) +/- 0.2°
Primary Flat Length16.0 mm +/- 1.0 mm
Single Side PolishedFront SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
(SSP)Back SurfaceFine ground, Ra = 0.8 μm to 1.2 μm
Double Side PolishedFront SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
(DSP)Back SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
TTV< 10 μm
BOW< 10 μm
WARP< 10 μm
Cleaning / PackagingClass 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.

Note: Custom sapphire wafers and substrates with any orientation and any thickness can be provided.


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