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V-Plane (22-43) Sapphire Wafers

V-Plane (22-43) Sapphire Wafers

Researchers have investigated the crystalline morphology such as lattice plane curvature and lattice plane tilting in (20–21) GaN films on (22–43) patterned sapphire substrates (PSS) by using X-ray rocking curve (XRC) measurements.

From the results of asymmetric XRC for the GaN (20–22) and (12–31) diffractions, it is found that lattice plane tilting is highly dependent on the film thickness and the growth condition. The C-plane-suppressed growth process with tuning the V/III ratio for the (20–21) GaN films on the (22–43) PSS is very effective to suppress the generation of basal plane stacking faults as confirmed by TEM analysis.

V-Plane (22-43) Sapphire Wafers V-Plane Sapphire Wafers
Specifications of V-Plane (22-43) Sapphire Wafers
Item2-inch V-plane(22-43) 430μm Sapphire Wafers
Crystal Materials99,999%, High Purity, Monocrystalline Al2O3
GradePrime, Epi-Ready
Surface OrientationV-plane(22-43)
Diameter50.8 mm +/- 0.1 mm
Thickness430 μm +/- 25 μm
Primary Flat OrientationA-plane(11-20) +/- 0.2°
Primary Flat Length16.0 mm +/- 1.0 mm
Single Side PolishedFront SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
(SSP)Back SurfaceFine ground, Ra = 0.8 μm to 1.2 μm
Double Side PolishedFront SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
(DSP)Back SurfaceEpi-polished, Ra < 0.5 nm (by AFM)
TTV< 10 μm
BOW< 10 μm
WARP< 10 μm
Cleaning / PackagingClass 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.

Note: Custom sapphire wafers with any orientation and thickness can be provided.

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