There are many kinds of polishing technology. From theory and practice, chemical mechanical polishing technology is widely used in processing some special materials, and the processing efficiency is obvious, which can realize the global flattening of materials.
In the sapphire processing technology, the core part is to study the chemical mechanical polishing technology, mainly including polishing mechanism, polishing method and polishing process. Chemical mechanical polishing (CMP) has been widely used in the processing of various materials since it was applied to integrated circuits. Many researchers have studied the material removal mechanism of CMP from the aspects of physical, chemical and control. However, at present, there are still many essential phenomena in CMP, which cannot be explained well.
Chemical mechanical polishing (CMP) is a complex multi-reaction process that uses mechanical grinding and chemical corrosion to remove materials. There are many factors that affect the CMP process of sapphire wafer supplier. The change of each influencing factor will affect the output parameters of the CMP system of sapphire wafer, that is, the mechanism of CMP material removal of the sapphire wafer is affected. There are subtle interactions. Chemical mechanical polishing (CMP) is the only polishing method which can realize global planarization, and it is easy to operate.
The main factors affecting CMP: pH value of polishing fluid, polishing pressure, rotating speed of the polishing disc, average particle size and particle size distribution of abrasive particles. In the process of processing, the balance of chemical and mechanical actions should be paid attention to. If the chemical action is stronger than the mechanical action, it will produce corrosion pits, orange peel and other defects; if the mechanical action is stronger than the chemical action, it will lead to scratches and scratches.