More and more materials are synthesized by means of deposition or epitaxy on the sapphire substrate.
Here we list some epitaxial layer (thin film) on sapphire for your reference:
GaN: LED application
SOS: Silicon on sapphire, semiconductor integrated circuit application
BN: h-BN insulator, buffer layer for graphene fabrication
ZnO: II-VI semiconductor, fabrication of surface acoustic wave device
AlN: on the patterned sapphire substrate, buffer layer for graphene fabrication or others
InN: by RF-MBE to get monocrystal InN on C-plane sapphire wafer, by MOCVD to get InN nanorod on R-plane sapphire
Al, Ga, In, N alloy: such as AlGaN, GaInN, InAlGaN, AlGaInN…
WSe2: TMDCs (Transition Metal Dichalcogenides), by CVD (Chemical vapor deposition) on C-plane sapphire
MoS2: TMDCs (Transition Metal Dichalcogenides), by CVD (Chemical vapor deposition) on C-plane sapphire
SiC: by LP-CVD (low-pressure chemical vapor deposition), on C-plane sapphire without AlN buffer layer
SnO: by PLD (pulsed laser deposition), on R-plane (1-102) sapphire
SnO2: wide bandgap, Ultraviolet material
ZnS: hexagonal lead-zinc structure
MgO: as a buffer material to induce polyoxide functional film
MgZnO: on M-plane(10-10) sapphire, the bang-gap alloy semiconductor film
BiFeO3: on GaN / C-plane sapphire
VO2: by PLD, on C-plane sapphire
MgB2: superconducting thin film
SiO2: by PECVD
ITO: conductive material
CeO2: buffer layer for superconducting thin film YBa2Cu3O7-δ(YBCO) fabrication
β-Ga2O3: on GaN / C-plane sapphire
In2O3: MOCVD, On C-plane sapphire
NiO: transition metal oxide film
TiO2: wide-bandgap oxide semiconductor material, photovoltaic material, Transparent Conductive Film
YSZ: Yttria-stabilized zirconia, PLD, YSZ / TiO2 / C-plane (0001) or A-plane (11-20) sapphire
LiNbO3: solar cell application
CZTS: epitaxy on sapphire or ZnS, Solar cell application
CdTe: II-VI compound semiconductor, solar cell application
