As a mature supplier of sapphire wafer and sapphire window, Cryscore Optoelectronic Limited produces all kinds of high quality sapphire wafers. Here, we will introduce an advanced and effective grinding and polishing method for sapphire wafers.
1. Rough grinding: high hardness micro powder with particle size of 26-43um is used as abrasive, which is mixed with deionized water, dispersant and suspending agent to form coarse grinding fluid. The abrasive accounts for 15~30%. Then put them into the grinder for grinding.
2. Medium grinding: high hardness micro powder with particle size of 3-9um is used as abrasive, which is mixed with deionized water, dispersant and suspending agent to form coarse grinding fluid. The abrasive accounts for 15~30%. Then put them into the grinder for grinding.
3. Fine grinding: high hardness micro powder with particle size of 0.2-3um is used as abrasive, which is mixed with deionized water, dispersant and suspending agent to form coarse grinding fluid. The abrasive accounts for 15~30%. Then put them into the grinder for grinding.
4. Polishing: silica aerogel with a particle size of 50 to 500nm is used as abrasive, which is mixed with water to form the polishing fluid. The abrasive accounts for 15~30%. Then put them into the machine for polishing to get polished sapphire substrates.
Through these four stages of grinding and polishing process, sapphire wafers will obtain relatively superior processing surface, that is, relatively low Ra value and TTV, so the time required for sapphire to achieve the predetermined target Ra and TTV in this process is reduced. By using this method, the polishing process time of sapphire can be controlled within 120-180min, the pass rate of batch preparation wafer is more than 90%, and the surface roughness is as low as 0.5nm. If you have any questions, please call Cryscore Optoelectronic Limited.
